List of Publications

Nikolaus Dietz , Department of Physics & Astronomy @ GSU


PATENTS

  1. "Incoherent Type-III materials for charge carriers control devices,"   Raphael Tsu, Nikolaus Dietz and Ian T. Ferguson, Application# 61/770,037, Priority date Feb. 27, 2013; WO/2011/019920 , publication date Apr.9, 2014.   (2.1 MB) 
  1. "High Pressure Chemical Vapor Deposition Apparatuses, Methods, and Compositions Produced Therewith,"   Nikolaus Dietz; US Patent No. 9,243,329, issued Jan. 26, 2016, priority date Aug. 12, 2009.   (880 KB) 
  1. "Optical confined birefringent Chalcopyrite heterostructure devices and operating method,"   Nikolaus Dietz, F. L. Madarasz, and D. P. Krivoshik; US Patent No. 6,834,149, issued Dec. 21, 2004, filed Dec. 10, 2001.   (1.4 MB) 
  1. "Chalcopyrite based nonlinear waveguided heterostructure devices and fabrication and operating methods,"   Nikolaus Dietz and K.J. Bachmann, US Patent No. 6,442,319, issued Aug. 27, 2002, filed Feb. 9, 1999.   (2.2 MB) 
  1. "Methods for Monitoring and Controlling Deposition and Etching using P-Polarized Reflectance Spectroscopy,"   K.J. Bachmann, N. Dietz and A.E. Miller, US Patent No. 5,552,327, issued Sep. 3, 1996, filed Aug. 1994.   (1.6 MB) 
  1. "Spectroscopic examination method for a substance in the low absorption regime"   H. J. Lewerenz and Nikolaus Dietz; FRG Patent No. DE 4211741; issued Sept. 21 2006, priority date April 5,1991.   (650 KB) 


REVIEWS

  1. "The Group III-Nitride Material Class: from Preparation to Perspectives in Photoelectrocatalysis,"  R. Collazo and N. Dietz, book chapter 8 in 'Photoelectrochemical Water Splitting: Issues and Perspectives,' ed. H-J. Lewerenz and L.M. Peter, RSC Publishing, pp. 193-222 (2013). DOI: 10.1039/9781849737739-00193   (1.4MB)  
  1. "Confined nonlinear II-IV-V2 waveguide structures for compact chemical and biological sensors,"  N. Dietz and Madarasz, book chapter 8 in 'Nonlinear Optics and Recent Advances in Optics,' ed. H. A. Abdeldayem and D. O. Frazier, Research Signpost, pp. 207-232, ISBN: 978-81-7736-073-8 (2007).   (6.4 MB) 
  1. "Indium-nitride growth by HPCVD: Real-time and ex-situ characterization,"   N. Dietz, book chapter 6 in "III-Nitrides Semiconductor Materials", ed. Z.C. Feng, Imperial College Press (ICP), ISBN 1-86094-636-4, pp. 203-235 (2006).   (6.4 MB) 
  1. "Chemical and Biological Sensors based on optically confined birefringent chalcopyrite heterostructures,"   N. Dietz and F. L. Madarasz, Mater. Sci. & Eng. B, Vol. 97(2) pp. 182-195 (2003).   (910 KB) 
  1. "Real-Time Process monitoring by P-Polarized Reflectance Spectroscopy and Closed-Loop Control of Vapor Phase Epitaxy,"   T.H. Banks, N. Dietz and K. Ito, in "Encyclopedia of Materials: Science and Technology"; ISBN: 0-08-043152-6; (Elsevier Science Ltd), pp. 9488-9497 (2001).   (650 KB) 
  1. "Real-Time Optical Characterization of Thin Film Growth,"   N. Dietz, Mater. Sci. & Eng. B87(1), pp. 1-22 (2001).   (1.1 MB)  
  1. "Real-time Monitoring of Epitaxial Processes by p-Polarized Reflectance Spectroscopy,"   N. Dietz and K.J. Bachmann, MRS Bulletin Vol.XX(5), pp. 49-55 (1995).   (3.1 MB  


PUBLICATIONS

  1. "Optoelectronic and structural properties of InGaN grown by Migration-Enhanced, Plasma-Assisted MOCVD, "  D. Seidlitz, M. K. I. Senevirathna, Y. Abate, A. Hoffmann and N. Dietz, SPIE Conf. Proc. 9571, 14th Int. Conf. SSL & LED-based Illum. Systems, p.95710P (Sept. 8, 2015); doi:10.1117/12.2188612   (1.5 MB).  
  1. "Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles, "  S. Alkis, F. I. Chowdhury, M. Alevli, N. Dietz, B. Yalızay, S. Aktürk, A. Nayfeh and A. K. Okyay, J. Opt. 17(10), p.105903(6pp) (2015); doi:10.1088/2040-8978/17/10/105903   (1.5 MB).  
  1. "Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition, "  M. Alevli, N. Gungor, S. Alkis, C. Ozgit-Akgun, I. Donmez, A. K. Okyay, S. Gamage, I. Senevirathna, N. Dietz and N. Biyikli, Phys. Status Solidi C 12(4-5), pp.423–429 (2015); doi:10.1002/pssc.201400171   (775 KB).  
  1. "A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation, "  B. Tekcan, S. Alkis, M. Alevli, N. Dietz, B. Ortaç, N. Biyikli, and A.K. Okyay, IEEE Electron Device Lett. 35(9), pp.936-9 (2014); doi:10.1109/LED.2014.2336795   (650 KB).  
  1. "Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer, "  N. El-Atab, F. Cimen, S. Alkis, B. Ortaç, M. Alevli, N. Dietz, A.K. Okyay, and A. Nayfeh, Appl. Phys. Lett. 104(25), pp.253106-4 (2014); doi:10.1063/1.4885397  (670 KB).  
  1. "Room Temperature GaN-based Spin Polarized Emitters,"  A. G. Melton, B. Kucukgok, Z. Liu, N. Dietz, N. Lu and I. T. Ferguson Proc. SPIE Vol. 8631 pp.863104-1-9 (2013). doi: 10.1117/12.2012586  (455 KB).  
  1. "Development of indium-rich InGaN epilayers for integrated tandem solar cells,"  A. G. Melton, B. Kucukgok, B-Z. Wang, N. Dietz, N. Lu and I. T. Ferguson, Mater. Res. Soc. Symp. Proc. Vol. 1493 E15.02, pp.1-6 (2013). doi:10.1557/opl.2013.229   (460 KB).  
  1. "Thermal stability of InN epilayers grown by high pressure chemical vapor deposition,"  A. R. Acharya, S. Gamage, M. K. I. Senevirathne, M. Alevli, K. Bahadir, A.G. Melton, I. Ferguson, N. Dietz, and B. D. Thoms, Appl. Surf. Sci. 268 pp.1-5 (2013). doi:10.1016/j.apsusc.2012.10.184;   (600 KB).  
  1. "Effect of nucleation period on the physical properties of InN epilayers,"  S. Gamage, M. K. I. Senevirathna, R. Atalay, A. G. U. Perera, A. G. Melton, I. T. Ferguson and N. Dietz, Proc. of SPIE Vol. 8484 pp.84841I-5 (2012). doi: 10.1117/12.930363;   (540 KB).  
  1. "Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD,"  R. Atalay, M. Buegler, S. Gamage, M. K. I. Senevirathna, B. Küçükgök, A. G. Melton, A. Hoffmann, A. G. U. Perera, I. T. Ferguson and N. Dietz, Proc. of SPIE Vol. 8484 pp.84840X-8 (2012). doi: 10.1117/12.930199;   (570 KB).  
  1. "Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition,"  M. K. I. Senevirathna, S. Gamage, R. Atalay, A. R. Acharya, A. G. U. Perera, N. Dietz, M. Buegler, A. Hoffmann, L. Su, A. Melton, and I. Ferguson, J. Vac. Sci. Technol. A 30(3) pp.031511-6 (2012).   (525 KB).  
  1. "Observation of NH2 species on tilted InN(01-11) facets,"  A. R. Acharya, M. Buegler, R. Atalay, N. Dietz, B. D. Thoms, J.S. Tweedie and R. Collazo, J. Vac. Sci. Technol. A 207(4) pp.041402-5 (2011).   (780 KB).  
  1. "Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD, "  M. Buegler, S. Gamage, R. Atalay, J. Wang, M. K. I. Senevirathna, R. Kirste, T. Xu, M. Jamil, I. Ferguson, J. Tweedie, R. Collazo, A. Hoffmann, Z. Sitar, and N. Dietz, Phys. Stat. Sol. (c) 8 pp. 2059-2062 (2011).   (400 KB).  
  1. "Reactor pressure - growth temperature relation for InN epilayers grown by high-pressure CVD, "  M. Buegler, S. Gamage, R. Atalay, J. Wang, I. Senevirathna, R. Kirste, T. Xu, M. Jamil, I. Ferguson, J. Tweedie, R. Collazo, A. Hoffmann, Z. Sitar, and N. Dietz, SPIE Vol. 7784, doi: 10.1117/12.860952 , paper# 77840F-1-7 (2010).   (660 KB).  
  1. " Optical Properties of InN Grown on Templates with Controlled Surface Polarities, "  R. Kirste, M.R. Wagner, A. Strittmatter, J. H. Schulze, R. Collazo, S. Sitar , M. Alevli, N. Dietz and A. Hoffmann, physica status solidi (a) 207(10), pp. 2351–2354 (2010).   (230 KB).  
  1. " The effects of V/III molar ratio on structural properties of In65Ga35N layers grown by HPCVD, "  G. Durkaya, M. Buegler, R. Atalay, I. Senevirathne, M. Alevli, O. Hitzemann, M. Kaiser, R. Kirste, A. Hoffmann, and N. Dietz, physica status solidi (a) 207(6), pp.1379-1382 (2010).   (390 KB).  
  1. "Growth temperature - phase stability relation in In1-xGaxN epilayers grown by high-pressure CVD, "  G. Durkaya, M. Alevli, M. Buegler, R. Atalay, S. Gamage, M. Kaiser, R. Kirste, A. Hoffmann, M. Jamil, I. Ferguson and N. Dietz Mater. Res. Soc. Symp. Proc. 1202, paper# 1202-I05-21, pp.1-6 (2010).   (530 KB).  
  1. "Seeded growth of AlN bulk crystals in m- and c-orientation, "  P. Lu, R. Collazo, R. F. Dalmau, G. Durkaya, N. Dietz, B. Raghothamachar, M. Dudley, Z. Sitar J. Cryst. Growth, 312(1) pp.58-63 (2009).   (60 KB).  
  1. "Al fraction induced effects on the capacitance characteristics of n+-GaN/AlxGa1-xN IR detectors,"  L. E. Byrum, G. Ariyawansa, R. Jayasinghe, N. Dietz, A. G. U. Perera, S. G. Matsik, I. T. Ferguson, A. Bezinger, and H. C. Liu, Proc. of SPIE Vol. 7467 pp.74670W (2009).   (250 KB).  
  1. "Optical and structural properties of InN grown by HPCVD,"  M. Buegler, M. Alevli, R. Atalay, G. Durkaya, I. Senevirathna, M. Jamil, I. Ferguson, and N. Dietz, Proc. of SPIE Vol. 7422 pp.742218-1-6 (2009).   (620 KB).  
  1. "Negative capacitance in GaN/AlGaN heterojunction dual-band detectors,"  L. E. Byrum, G. Ariyawansa, R. C. Jayasinghe, N. Dietz, A. G. U. Perera, S. G. Matsik, I. T. Ferguson, A. Bezinger, and H. C. Liu, J. Appl. Phys. 106(5) pp.053701-5 (2009).   (680 KB).  
  1. "Capacitance Hysteresis in GaN/AlGaN Heterostructures,"  L. E. Byrum, G. Ariyawansa, R. C. Jayasinghe, N. Dietz, A. G. U. Perera, S. G. Matsik, I. T. Ferguson, A. Bezinger, and H. C. Liu, J. Appl. Phys. 105(2) pp.023709-4 (2009).   (180 KB).  
  1. "Simultaneous detection of ultraviolet and infrared radiation in single GaN/GaAlN heterojunction,"  R. C. Jayasinghe, G. Ariyawansa, N. Dietz, A. G. U. Perera, S. G. Matsik, H. B. Yu, I. T. Ferguson, A. Bezinger, S. R. Laframboise, M. Buchanan, and H. C. Liu, Opt. Lett..33(21)   pp. 2422-2424 (2008).   (360 KB).  
  1. "Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations,"  P. Lu, R. Collazo, R. F. Dalmau, G. Durkaya, N. Dietz and Z. Sitar, Appl. Phys. Lett.93(13)   pp. 131922-3 (2008).   (770 KB).  
  1. "Optical Characterization of InN Layers Grown by High-Pressure Chemical Vapor Deposition,"  M. Alevli, G. Durkaya, R. Atalay, R. Kirste, A. Weerasekara, A. G. U. Perera, A. Hoffmann and N. Dietz, J. Vac. Sci. Technol. A26(4)  pp. 1023-1026 (2008).   (480 KB).  
  1. "Desorption of hydrogen from hydrogenated indium nitride surface observed by HREELS,"  R. P. Bhatta, B. D. Thoms, M. Alevli, and N. Dietz, Surf. Sci.602(7)   pp. 1428-1432 (2008).   (510 KB).  
  1. "The influence of substrate polarity on the structural quality of InN layers grown by high-pressure CVD,"  N. Dietz M. Alevli, R. Atalay, and G. Durkaya, R. Collazo, J. Tweedie, S. Mita, and Z. Sitar, Appl. Phys. Lett.92(4)   pp. 041911-3 (2008).   (550 KB).  
  1. "Structure of Isolated Oxygen Impurity States in InN,"  D. Alexandrov, S. Butcher N. Dietz and H. Yu, Mat. Res. Soc. Symp. Proc. 1040E   pp. Q9.15-6 (2008).   (100 KB).  
  1. "Electron Band Structure of MnGaN,"  D. Alexandrov, N. Dietz, I. Ferguson and H. Yu, Mat. Res. Soc. Symp. Proc. 1040E pp. Q5-02 (2008).   (110 KB).  
  1. "Optical properties of n-doped Ga1-xMnxN epitaxial layers grown by MOCVD in mid and far (5 - 50 micro meter) IR range,"  A. B. Weerasekara, Z. G. Hu, N. Dietz, A. G. U. Perera, A. Asghar, M. H. Kane, M. Strassburg, and I. T. Ferguson, J. Vac. Sci. Technol. B 26(1) , pp. 52-55 (2008).   (340 KB).  
  1. "Dual band HEIWIP detectors with nitride materials,"  RA. G. U. Perera, G. Ariyawansa, R. Jayasinghe, L. Byrum, N. Dietz, S. G. Matsik, I. T. Ferguson, H. Luo, A. Bezinger, and H.C. Liu, Proc. SPIE Vol. 6678 pp. 1-10, (2007).   (560 KB).  
  1. "Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition,"  R. P. Bhatta, B. D. Thoms, M. Alevli, and N. Dietz, Surf. Sci. 601(19) pp. L120-L123 (2007).   (250 KB).  
  1. "Infrared optical anisotropy of diluted magnetic Ga1-xMnxN/c-sapphire epilayers with a GaN buffer layer by metalorganic chemical vapor deposition,"  Z. G. Hu, A. B. Weerasekara, N. Dietz, A. G. U. Perera, M. Strassburg, M. H. Kane, A. Asghar, and I. T. Ferguson, Physical Review B 75 pp. 205320-8 (2007).   (160 KB).  
  1. "Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition,"  R. P. Bhatta, B. D. Thoms, A. Weerasekera, A. G. U. Perera, M. Alevli, and N. Dietz, J. Vac. Sci. Technol. A 25(4) pp. 967-970 (2007).   (120 KB).  
  1. "Performance improvements of ultraviolet/infrared dual-band detectors,"  A.G.U. Perera, G. Ariyawansa, M.B.M. Rinzan, M. Stevens, M. Alevli, N. Dietz, S.G. Matsik, A. Asghar, I.T. Ferguson, H. Luo, A. Bezinger and H.C. Liu, Infrared Physics & Technology 50 pp.142-8 (2007).   (650 KB).  
  1. "Properties of InN layers grown by High Pressure CVD,"   M. Alevli, G. Durkaya, R. Kirste, A. Weesekara, W. E. Fenwick, V. T. Woods, I. T. Ferguson, A. Hoffmann, A.G.U. Perera and N. Dietz, Mat. Res. Soc. Symp. Proc. 955 , I8.4, pp.1-6 (2007).   (800 KB).  
  1. "GaN/AlGaN heterojunction infrared detector responding in 8-14 µm and 20-70 µm ranges,"  G. Ariyawansa, M. B. M. Rinzan, M. Strassburg, N. Dietz, A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, and H. C. Liu, Appl. Phys. Lett. 89 pp.141122-3 (2006).   (230 KB).  
  1. "Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1-xMnxN,"   W. E. Fenwick, A. Asghar, S. Gupta, H. Kang, M. Strassburg, N. Dietz, S. Graham, M. H. Kane, and I. T. Ferguson, Vac. Sci. Technol. A 24, pp. 1640-1643 (2006).   PDF file ( 168 KB )
  1. "The characterization of InN layers grown by high-pressure chemical vapor deposition,"  M. Alevli, G. Durkaya, W. Fenwick, A. Weerasekara, V. Woods, I. Ferguson, A.G.U. Perera and N. Dietz, Appl. Phys. Lett. 89 pp. 112119 (2006).   PDF file ( 275 KB )
  1. "A GaN/AlGaN ultraviolet/infrared dual-band detector,"   G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, A. Bezinger, and H. C. Liu, Appl. Phys. Lett. 89 pp. 091113 (2006).   PDF file ( 195 KB )
  1. "Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices,"   M. H. Kane, M. Strassburg, W. E. Fenwick, A. Asghar, J. Senawiratne, D. Azamat, Z. Hu, E. Malguth, S. Graham, U. Perera, W. Gehlhoff, A. Hoffmann, N. Dietz, C. J. Summers, I. T. Ferguson, physica status solidi (c) 3(6) pp. 2237-2240 (2006).   PDF file ( 290 KB )
  1. "Fermi level dependence of the optical and magnetic properties of Ga1-xMnxN grown by metal-organic chemical vapour deposition,"   M. Strassburg, M.H. Kane, A. Asghar, Q. Song, Z.J. Zhang, J. Senawiratne, M. Alevli, N. Dietz, C.J. Summers and I.T. Ferguson, J. Phys.: Condens. Matter. 18(8) pp. 2615-22 (2006).   PDF file ( 240 KB )
  1. "Metal Organic Chemical Vapor Deposition Growth of GaN and GaMnN Multifunctional Nanostructures,"   S. Gupta, H. Kang, M. Kane, W. Fenwick, N. Li, M. Strassburg, A. Asghar, N. Dietz, and I.T. Ferguson, Mat. Res. Soc. Symp. Proc. 901E, Ra13.4, pp. 1-6 (2006).   PDF file ( 230 KB )
  1. "Lattice vibrations in hexagonal Ga1-xMnxN epitaxial films on c-plane sapphire substrates by infrared reflectance spectra,"   Z. G. Hu, M. Strassburg, A. Weerasekara, N. Dietz. A.G. Perera, M. H. Kane, A. Asghar, and I. T. Ferguson, Appl. Phys. Lett. 88 pp. 061914-3 (2006).   PDF file ( 230 KB )
  1. "Properties of InN grown by High-Pressure CVD,"   M. Alevli, G. Durkaya, V. Woods, U. Habeck, H. Kang, J. Senawiratne, M. Strassburg, I. T. Ferguson, A. Hoffmann, and N. Dietz; Mat. Res. Soc. Symp. Proc. 892, ISBN: 1-55899-846-2, FF6.2, pp.1-6 (2006).   PDF file ( 1.2 MB )
  1. "Cu induced optical transitions in MOCVD grown Cu doped GaN," J. Senawiratne, M. Strassburg, A. Payne, A. Asghar, W. Fenwick, N. Li, I.T. Ferguson, and N. Dietz; Mat. Res. Soc. Symp. Proc. 892, ISBN: 1-55899-846-2, FF 23.8, pp. 1-6 (2006).   PDF file ( 310 KB )
  1. "Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition," R. P. Bhatta, B. D. Thoms, M. Alevli, V. Woods, and N. Dietz; Appl. Phys. Lett. 88 pp. 122112-3 (2006).   PDF file ( 280 KB )
  1. "Composition dependence of the infrared dielectric function in Si-doped hexagonal AlxGa1-xN films on c-plane sapphire substrates," Z. G. Hu, M. Strassburg, N. Dietz. A.G. Perera, A. Asghar, I.T. Ferguson; Phys. Rev. B 72 pp. 245326-10 (2005).   PDF file ( 150 KB )
  1. "InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization,"   V. Woods and N. Dietz; Mater. Sci. & Eng. B 127(2-3) pp 239-250 (2006).   PDF-file (1 MB)   or   {Preprint version (PDF=5 MB) }
  1. "Solid-State Molecular Sensors (SSMS) based on confined III-IV-V2 multi-functional heterostructures,"   N. Dietz, F. Madarasz, and R. Inguva; Proc. SPIE Vol. 5912, ISBN 0-8194-5917-8, pp. 129-138 (2005).   PDF file ( 640 KB )
  1. "Advanced computational modeling for growing III-V materials in OMCVD reactors,"   B.H. Cardelino, C.E. Moore, C.A. Cardelino, and N. Dietz; Proc. SPIE Vol. 5912, ISBN 0-8194-5917-8, pp. 86-99 (2005).   PDF file ( 520 KB )
  1. "The growth of InN and related alloys by high-pressure CVD,"   N. Dietz, M. Alevli, H. Kang, M. Straßburg, V. Woods, I. T. Ferguson, C. E. Moore and B. H. Cardelino; Proc. SPIE Vol. 5912, ISBN 0-8194-5917-8, pp. 78-85 (2005).   PDF file ( 270 KB )
  1. "Alloying, co-doping, and annealing effects on the magnetic and optical properties of MOCVD-grown Ga1-xMnxN,"   M.H. Kane, M. Strassburg, A. Asghar, W.E. Fenwick, J. Senawiratne, Q. Song, C.J. Summers, Z.J. Zhang, N. Dietz and I.T. Ferguson; Mater. Sci. & Eng. B 126(2-3) pp 230-235 (2006).   PDF file (310 KB)
  1. "Transition metals in ZnGeP2 and other II-IV-V2 compounds,"   W. Gehlhoff, D. Azamat, A. Hoffmann, N. Dietz, and O.V. Voevodina; Physica B 376-377, pp. 790-794 (2006).   PDF file ( 250 KB )
  1. "A nucleation study of group III-nitride multifunctional nanostructures,"   S. Gupta, H. Kang, M. Strassburg, A. Asghar, M. Kane, W.E. Fenwick, N. Dietz and I.T. Ferguson; J. Cryst. Growth 287287(2)pp. 596-600 (2006).   PDF file (450 KB)
  1. "Correlation of the structural and ferromagnetic properties of Ga1-xMnxN grown by metalorganic chemical vapor deposition,"   M.H. Kane, M. Strassburg, W.E. Fenwick, A. Asghar, A.M. Payne, S. Gupta, Q. Song, Z.J. Zhang, N. Dietz, C.J. Summers and I.T. Ferguson; J. Cryst. Growth 287(2) pp. 591-595 (2006).   PDF file (350 KB)
  1. "The characterization of InN growth under high-pressure CVD conditions,"   N. Dietz, M. Alevli, V. Woods, M. Strassburg, H. Kang, and I. T. Ferguson; phys. stat. sol. (b) 242 242(15) pp. 2985-2994 (2005).   file ( 1.2 MB)
  1. "Nucleation and growth of InN by high-pressure chemical vapor deposition: optical monitoring,"   V. Woods, J. Senawirante, and N. Dietz, J. Vac. Sci. Technol. B 13(4), pp. 1790-1794 (2005).   PDF file (420 KB)
  1. "Magnetic and optical properties Ga1-xMnxN Grown by Metalorganic Chemical Vapor Deposition,"   M. Kane, A. Asghar, A.M. Payne, C.R. Vesta, M. Strassburg, J. Senawiratne, Z John Zhang, N. Dietz, C. Summers, I.T. Ferguson; Semicond. Sci. Technol. 20 L5 - L9 (2005).   PDF file (188 KB)  
  1. "Optical and Structural Investigations on Mn Ion States in MOCVD-grown Ga1-xMnxN,"   M. Strassburg, J. Senawiratne, and N. Dietz, M.H. Kane, A. Asghar, A.M. Payne, and I.T. Ferguson, C.R. Summers, U. Haboeck, A. Hoffmann, D. Azamat, and W. Gehlhoff, Mat. Res. Soc. Symp. Proc. 831, ISBN 1-55899-779-2, E9.5.1-6 (2005).   PDF file (170KB)
  1. "Development of Dual MQW Region LEDs for General Illumination,"   D.B. Nicol, A. Asghar, D. Mehta, M. Tran, H. Kang, I.T. Ferguson, M. Alevi, J. Senawiratne, C. Hums, M. Strassburg, N. Dietz, A. Hoffmann, Mat. Res. Soc. Symp. Proc. 831, ISBN 1-55899-779-2, E10.3.1-6 (2005).   PDF file (120 KB)
  1. "Real-time Optical Monitoring of Ammonia Decomposition Kinetics in InN Vapor Phase Epitaxy at Elevated Pressures,"   N. Dietz, M. Strassburg and V. Woods; J. Vac. Sci. Technol. A 23(4) pp. 1221-1227 (2005).   PDF file (240 KB)   /   Pre-Print(color) (1.6 MB)
  1. "A Nucleation Study of GaN Multifunctional Nanostructures,"   S. Gupta, H. Kang, M. Strassburg, A. Asghar, J. Senawiratne, N. Dietz, I. Ferguson; Mat. Res. Soc. Symp. Proc. 831, ISBN 1-55899-779-2, E12.7.1-7 (2005).   PDF file (140 KB)
  1. "Impact of Manganese incorporation on the structural and magnetic properties of MOCVD-grown Ga1-xMnxN,"   M. H. Kane, A. Asghar, H. Kang, A. M. Payne, and I.T. Ferguson, C.R. Summers, C.R. Vestal; and Z.J. Zhang, M. Strassburg, J. Senawiratne, and N. Dietz, D. Azamat, W. Gehlhoff, U. Haboeck, and A. Hoffmann,; Mat. Res. Soc. Symp. Proc. 831, ISBN 1-55899-779-2, E9.4.1-6 (2005).   PDF file (1.9 MB)
  1. "Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices,"  M.H. Kane, M. Strassburg, A. Asghar, Q. Song, S. Gupta, J. Senawiratne, C. Hums, U. Haboeck, A. Hoffmann, D. Azamat, W. Gehlhoff, N. Dietz, Z.J. Zhang, C.J. Summers, I.T. Ferguson, Proc. SPIE Int. Soc. Opt. Eng. 5732, p. 389-400 (2005).   PDF file (1.9 MB)
  1. "Growth of high quality AlN single crystals and their optical properties," M. Strassburg, J. Senawiratne, N. Dietz, U. Haboeck, A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, and Z. Sitar; AIP Conf. Proc. 772, ISBN 0-7354-0257-4   p. 211-212 (2005).   PDF file (230 KB)
  1. "Comparison of Ga1-xMnxN Epilayers Prepared by Ion Implantation and MOCVD," M.H. Kane, A. Asghar, A.M. Payne, C.R. Vestal, Z.J. Zhang, M. Strassburg, J. Senawirante, N. Dietz, C.J. Summers, and I.T. Ferguson; phys. stat. sol. (c) 2(7) pp. 2441-2445 (2005).   PDF file (280 KB)
  1. "Raman, Photoluminescence and Absorption Studies on high quality AlN single crystals," J. Senawiratne, M. Strassburg, N. Dietz, U. Haboeck, A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, and Z. Sitar; phys. stat. sol. (c) 2(7) pp. 2774-2778 (2005).   PDF file (160 KB)
  1. "Advanced Computational Modeling of Vapor Deposition in a High-Pressure Reactor" , B. H. Cardelino, C. E. Moore, S. D. McCall, C. A. Cardelino, N. Dietz, K.J. Bachmann, CAITA-2004, ISBN 86-7466-117-3, pp.1 -13 (2004).   PDF file (600 KB)
  1. "The growth and optical properties of large, high quality AlN single crystals" , M. Strassburg, J. Senawiratne, N. Dietz, U. Haboeck, A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, and Z. Sitar, Journal of Applied Physics 96 (10) pp. 5870-5876 (2004).   PDF file (300 KB)
  1. "Real-time optical monitoring of gas phase dynamics for the growth of InN at elevated pressures," N. Dietz, H. Born, M. Strassburg and V. Woods, Mat. Res. Soc. Symp. Proc. 798 ISBN 1-55899-736-9, pp.Y10.45.1-4 (2004).   PDF file (670 KB)
  1. "Investigation of molecular co-doping for low ionization energy p-type centers in (Ga,Al)N" , Z. C. Feng, A.M. Payne, D. Nicol, P.D. Helm, I. Ferguson, J. Senawiratne and N. Dietz, Mat. Res. Soc. Symp. Proc. 798 ISBN 1-55899-736-9, Y10.44.1-4 (2004). [ PDF file (230 KB)]
  1. "Real Time Optical Characterization of Gas Flow Dynamics in High Pressure Chemical Vapor Deposition," V. Woods, H. Born, M. Strassburg and N. Dietz, J. Vac. Sci. Technol. A 22(4), pp. 1596 - 1599 (2004) [ PDF file (370 KB)]
  1. "Structure and energy level of native defects in as-grown and electron-irradiated zinc germanium diphosphide studied by EPR and photo-EPR," W. Gehlhoff, D. Azamat, A. Hoffmann, and N. Dietz, J. Phys. and Chemistry of Solids 64 (9-10) pp.1923-1927 (2003). [ PDF file (150 KB)]
  1. "Real-time optical monitoring and simulation of gas phase kinetics in InN vapor phase epitaxy at high pressure," N. Dietz, V. Woods, S. McCall and K.J. Bachmann, Proceedings of the Microgravity Conference 2002, Huntsville AL. June 25-26, NASA/CP-2003-212339, pp. 169 -181 (2003). [PDF file (1.4 MB)]
  1. "Pseudodielectric Function of ZnGeP2 from 1.5 to 6 eV," V. Blickle, K. Flock, N. Dietz, D.E. Aspnes, Appl. Phys. Lett. 81(4), pp 628-630 (2002). [PDF file (72 KB)]
  1. "Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy," V. Narayanan, S. Mahajan, K.J. Bachmann, V. Woods and N. Dietz, Acta Materialia 50(6) pp. 1275-1287 (2002). [PDF file (1 MB)]
  1. "Stacking faults and twins in gallium phosphide layers grown on silicon," V. Narayanan, S. Mahajan, K.J. Bachmann, V. Woods and N. Dietz, Phil. Mag A, 82(4) pp. 685-698 (2002). [ PDF file (2.6 MB)]
  1. "Energy levels of native defects in Zinc Germanium Diphosphide," W. Gehlhoff, R.N. Pereira, D. Azamata, A. Hoffmann, N. Dietz, PHYSICA B 308 - 310, pp. 1015 - 1019 (2001). [PDF file (150 KB)]
  1. "Real-time optical monitoring of flow kinetics and gas phase reactions under high-pressure OMCVD condition," N. Dietz, S. McCall, K.J. Bachmann, Proceedings of the Microgravity Materials Science Conference 2000, Huntsville AL. June 6-8, NASA/CP-2001-210827, pp. 176 -181 (2001). [PDF file (500 KB)]
  1. "Surface reaction kinetics of Ga1-xInxP growth during pulsed chemical beam epitaxy," N. Dietz, S.C. Beeler, J.W. Schmidt and H.T. Tran, Applied Surface Science 178(1-4), pp 63-74 (2001). [PDF file (365 KB)]
  1. "A theoretical analysis of phase matched SHG and OPO in birefringent semiconductor waveguides," J. O. Dimmock, F. L. Madarasz, N. Dietz and K. J. Bachmann, Applied Optics 40(9), pp. 1438-1441 (2001). [PDF file (76 KB)]
  1. "Island coalescence induced substructure within GaP epitaxial layers grown on (001), (111), (110) and (113) Si," V. Narayanan, S. Mahajan, K.J. Bachmann, V. Woods, and N. Dietz, Mat. Res. Soc. Symp. Proc. Vol. 618, pp. 53-58 (2000). [PDF file (1.2 MB)]
  1. "Real-time optical Characterization and Control of Heteroepitaxial GaxIn1-xP Growth by P-Polarized Reflectance," N. Dietz, K. Ito, I. Lauko, and V. Woods, Mat. Res. Soc. Symp. Proc. Vol. 591, ISBN: 1-55899-499-8, pp. 307-312 (2000). [PDF file (1.2 MB)]
  1. "Effects of fast electron irradiation on electrical and optical properties of CdGeAs2 and ZnGeP2" I. Zwieback, J. Maffetone, D. Perlov, J. Harper, W. Ruderman, K.J. Bachmann and N. Dietz, Mat. Res. Soc. Symp. Proc. 607, ISBN: 1-55899-515-3, pp. 409-414 (2000). [PDF file (1.9 MB)]
  1. "Native Defect Characterization in ZnGeP2" A. Hoffmann, H. Born, A. NŠser, W. Gehlhoff, J. Maffetone, D. Perlov, W. Ruderman, I. Zwieback, N. Dietz and K.J. Bachmann, Mat. Res. Soc. Symp. Proc. 607, ISBN: 1-55899-515-3, pp. 373-378 (2000) [PDF file (1.1 MB)]
  1. "Real-time thickness and compositional control of GaxIn1-xP Growth using P-Polarized Reflectance" V. Woods, K. Ito, I. Lauko and N. Dietz, J. Vac. Sci. Technol. A 18(4) pp. 1190-1195 (2000). [PDF file (118 KB)]
  1. "Sellmeier parameters for ZnGeP2 and GaP2" F. L. Madarasz, J. O. Dimmock, N. Dietz and K. J. Bachmann, Journal of Applied Physics 87(3) pp. 1564-1565 (2000).[PDF file (24 KB)]
  1. "Orientation Mediated Self-Assembled Gallium Phosphide Islands Grown on Silicon" V. Narayanan, S. Mahajan, N. Sukidi, K. Bachmann, V. Woods and N. Dietz, Philosophical Magazine A 80(3), pp. 555-572 (2000). [PDF file (1.3 MB)]
  1. "Representation of GaP Formation by a Reduced Order Model using P-Polarized Reflectance Measurements" S. Beeler, H.T. Tran and N. Dietz, Journal of Applied Physics 86(1), pp. 674-682 (1999). [PDF file (404 KB)]
  1. ""Real-Time Optical Control of Ga1-xInxP Film Growth by P-Polarized Reflectance" N. Dietz, V. Woods, K. Ito and I. Lauko, J. Vac. Sci. Technol. A, 17(4), pp. 1300-1306 (1999). [PDF file (408 KB)]
  1. ""Optical Approaches for Controlling Epitaxial Growth" D. E. Aspnes and N. Dietz, Applied Surface Science 130-132(1-4) pp. 367-376 (1998). [PDF file (388 KB)]
  1. "Real-time optical Characterization of GaP Heterostructures by P-Polarized Reflectance" N. Dietz and K. Ito, Thin Solid Films 313-314(1-2) pp. 615-620 (1998). [PDF file (256 KB)]
  1. "Growth of GaP layers by chemical beam epitaxy on oxide patterned Si(001) substrates" V. Narayanan, N. Sukidi, Chimn Hu, N. Dietz, K. J. Bachmann, S. Mahajan and S. Shingubara, Mater. Sci. & Eng. B54, p.207-209 (1998). [PDF file (350 KB)]
  1. ""Real-time Monitoring of Heteroepitaxial GaxIn1-xP/GaP Growth by P-Polarized Reflectanc" N. Dietz, N. Sukidi, C. Harris and K.J. Bachmann, Conf. Proc. of IPRM-9' 97, ISSN 1092-8669, pp. 521 (1997). [PDF file (364 KB)]
  1. ""Heteroepitaxial layer overgrowth of GaP on structured Silicon surfaces" N. Sukidi, N. Dietz, K.J. Bachmann, S. Shingubara and S. Yokoyama, in 'State-of-the-Art Program on Compounds Semiconductors XXVI'; D.N. Buckley, S.N.G. Chu, H.Q. Hou, R.E. Sah, J.P.Vilcot and M.J. Deen (editors), pp. 97-101 (1997). [PDF file (692 KB)]
  1. "GaxIn1-xP/GaP single and multiple heterostructures on Si(100) substrate" N. Sukidi, N. Dietz, U. Rossow and K.J. Bachmann, Mat. Res. Soc. Symp. Proc. 441, pp. 81-86 (1997). [PDF file (2.2 MB)]
  1. "High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits" J. Maeda, Y. Sasaki, N. Dietz, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose, JJAP part 1; 36(3B) p.1554-1557 (1997). [PDF file (810 KB)]
  1. "Real-time Characterization of the Optical Properties of an ultra-thin Surface Reaction Layer during Growth" N. Dietz, N. Sukidi, C. Harris and K.J. Bachmann, Mat. Res. Soc. Symp. Proc. 441, p. 39-44 (1997). [PDF file (1.2 MB)]
  1. "Multilevel Approaches towards Monitoring and Control of Epitaxy" D.E. Aspnes, N. Dietz, U. Rossow and K.J. Bachmann, Mat. Res. Soc. Symp. Proc. 448 p.451-462 (1997). [PDF file (2.8 MB)]
  1. "Defect Characterization in ZnGeP2 by Time -Resolved Photoluminescence" N. Dietz, W. Busse, H. E. Gumlich, W. Ruderman, I. Tsveybak, G. Wood and K.J. Bachmann, Mat. Res. Soc. Symp. Proc. 450, p. 333 - 8 (1997). [PDF file (270 KB)]
  1. "Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance spectroscopy" K.J. Bachmann, N. Sukidi, N. Dietz, C. Hoepfner, S. LeSure, H.T. Tran, S. Beeler, K. Ito and H.T. Banks, J. Cryst. Growth 183, 323-337 (1998). [PDF file (760 KB)]
  1. ""Real-time Monitoring of Surface Processes by P-Polarized Reflectance" N. Dietz, N. Sukidi, C. Harris and K.J. Bachmann, J. Vac. Sci. Technol. A15(3) p. 807-815 (1997). [PDF file ( 3.7 MB)]
  1. "Molecular Layer Epitaxy by Real-Time Optical Process Monitoring" K. J. Bachmann, C. Hoepfner, N. Sukidi, A. Miller, C. Harris, D.E. Aspnes, N. Dietz, H.T. Tran, S. Beeler, K. Ito, H.T. Banks and U. Rossow, Applied Surface Science 112, pp. 38-47 (1997) [PDF file (552 KB)]
  1. "Heteroepitaxy of GaP on Si(100)" K. J. Bachmann, U. Rossow, N. Sukidi, H. Castleberry and N. Dietz, J. Vac. Sci. Technol. B14(4), pp. 3019-29 (1996). [PDF file (380 KB)]
  1. "Optical investigations of surface processes in GaP heteroepitaxy on silicon under pulsed chemical beam epitaxy condition" U. Rossow, N. Dietz, K. J. Bachmann and D. E. Aspnes, J. Vac. Sci. Technol. B14(4) 3040-6 (1996). [PDF file (140 KB)]
  1. "Real-Time Optical Monitoring of GaxIn1-xP/GaP on Silicon Heterostructures" N. Dietz, U. Rossow, D. E. Aspnes, N. Sukidi and K.J. Bachmann, Mat. Res. Soc. Symp. Proc. 406, 127-32 (1996). [PDF file (160 KB)]
  1. "Modeling and Control of Advanced Chemical Vapor Deposition Processes" H.T. Banks, K. Ito, J.S. Scroggs, H.T. Tran, N. Dietz, and K.J. Bachmann, in 'Mathematics of Microstructure Evolution', L-Q. Chen and B. Fultz, ed. (ISBN: 0-87339-351-1), pp. 327-344 (1996).
  1. "Real-Time Optical Monitoring of Epitaxial Growth Processes by P-Polarized Reflectance Spectroscopy" N. Dietz and K.J. Bachmann, Mat. Res. Soc. Symp. Proc. 406, 341-6 (1996). [PDF file (240 KB)]
  1. "Real-Time Optical Monitoring of Heteroepitaxial Growth Processes on Si under Pulsed Chemical Beam Epitaxy Conditions" N. Dietz, U. Rossow, D. E. Aspnes and K.J. Bachmann, Applied Surface Science 102, pp.47-51 3067 (1996). [PDF file (372 KB)]
  1. "Real-Time Optical Monitoring of GaxIn1-xP/GaP Heteroepitaxy on Si under Pulsed Chemical Beam Conditions" N. Dietz, U. Rossow, D. E. Aspnes and K.J. Bachmann, Journal of Crystal Growth 164, pp. 34-39 (1996). [PDF file (444 KB)]
  1. "P-Polarized Reflectance Spectroscopy: A highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions" N. Dietz and K.J. Bachmann, Vacuum 47(2), pp. 133-140 (1996). [PDF file (720 KB)]
  1. "Real-Time Monitoring of Heteroepitaxial Growth Processes on the Silicon (001) surface by P-Polarized Reflectance Spectroscopy" K.J. Bachmann, U. Rossow and N. Dietz, Mater. Sci. & Eng. B 35, pp. 472-478 (1995). [PDF file (572 KB)]
  1. "Real-Time Optical Monitoring of Epitaxial Growth: Pulsed Chemical Beam Epitaxy of GaP and InP Homoepitaxy and Heteroepitaxy on Si" N. Dietz, U. Rossow, D. Aspnes and K.J. Bachmann, Journal of Electronic Materials 24(11), pp. 1571-76 (1995). [PDF file (2.7 MB)]
  1. "High Pressure Vapor Transport of ZnGeP2: II. Three-dimensional Simulation of Gasdynamics under Microgravity Conditions Evaluation" J.S. Scroggs, H.T. Banks, K. Ito, S. Ravindran, H.T. Tran, K.J. Bachmann, H. Castleberry, and N. Dietz, in Proc. 7th Int. Symp. on Expt. Methods of Microgravity, R. Schiffmann (ed.), TMS, Warrendale, PA, pp. 67-72, CRSC-TR95-15 (1995). [PDF file (185 KB)]
  1. "High Pressure Vapor Transport of ZnGeP2: I. Parameter Evaluation" S. Fiechter, R.H. Castleberry, N. Dietz, K.J. Bachmann, H.T. Bank, K. Ito, J.S. Scroggs and Hien Tran, in Proc. 7th Int. Symp. on Expt. Methods of Microgravity, R. Schiffmann (ed.), TMS, Warrendale, PA, pp. 57-66 (1995). [PDF file (2.5 MB)]
  1. "Surface and Defect Structure of Epitaxial Gallium Phosphide on Silicon" A.E. Miller, J.T. Kelliher, N. Dietz and K.J. Bachmann, Mat. Res. Soc. Symp. Proc. 355, pp.197-202 (1995).
  1. "Surface Characterization of CuInS2 with Lamellar Morphology" S. Cattarin, C. Pagura, L. Armelao, R.Bertoncello and N. Dietz, J. Electroch. Soc. 142(8), pp. 2818-2823 (1995). [PDF file (2.4 MB)]
  1. "Heteroepitaxy of lattice-matched compound semiconductors on silicon" K. J. Bachmann, N. Dietz, A. E. Miller, D. Venables, and J. T. Kelliher, J. Vac. Sci. Technol. A 13(3), pp. 696-704 (1995). [PDF file (476 KB)]
  1. "Real-Time Monitoring of Homoepitaxial and Heteroepitaxial Processes by p-Polarized Reflectance Spectroscopy" N. Dietz, A.E. Miller and K.J. Bachmann, J. Vac. Sci. Technol. A 13(1), pp. 153-155 (1995). [PDF file (88 KB)]
  1. "Migration-enhanced pulsed chemical beam epitaxy of GaP on Si(001)" N. Dietz, A.E. Miller, J.T. Kelliher, D. Venables and K.J. Bachmann, J. Cryst. Growth 150, pp. 691-695 (1995). [PDF file (488 KB)]
  1. "Electro-dissolution and Corrosion of CuInS2 Photoanodes with Lamellar Morphology" S. Cattarin, P. Guerriero, N. Dietz and H.J. Lewerenz, Electrochim. Acta 40(8) pp. 1041-49 (1995). [PDF file (880 KB)]
  1. "Native defect related optical properties of ZnGeP2" N. Dietz, I. Tsveybak, W. Ruderman, G. Wood and K.J. Bachmann, Appl. Phys. Lett. 65(22), pp. 2759-61 (1994). [PDF file (92 KB)]
  1. "Interrupted cycle chemical beam epitaxy of gallium phosphide on silicon with or without photon assistance" J.T. Kelliher, A.E. Miller, N. Dietz, S. Habermehl, Y.E. Chen, Z. Lu, G. Lucovsky and K.J. Bachmann, Applied Surface Science 86, pp. 453-456 (1995). PDF file (280 KB)]
  1. " In-situ Multilayer Film Growth Characterization by Brewster Angle Reflectance Differential Spectroscopy, " N. Dietz, D.J. Stephens, G. Lucovsky and K.J. Bachmann, Mat. Res. Soc. Symp. Proc. 324, pp. 27-32 (1994). PDF file (200 KB)]
  1. " Growth and Characterization of Si-GaP and Si-GaP-Si Heterostructures, " N. Dietz, S. Habermehl, J.T. Kelliher, G. Lucovsky and K.J. Bachmann, Mat. Res. Soc. Symp. Proc. 334, pp. 495-500 (1994).
  1. " Heteroepitaxial Growth of Si on GaP and GaAs Surfaces by Remote Plasma Enhanced Chemical Vapor Deposition, " S. Habermehl, N. Dietz, Z. Lu, K.J. Bachmann and G. Lucovsky, J. Vac. Sci. Technol. A 12(4) pp. 990-994 (1994). PDF file (940 KB)]
  1. " The Interaction of Hydrogen Plasmas with Ga based III-V Semiconductor Surfaces, " Z. Lu, S. Habermehl, G. Lucovsky, N. Dietz and K.J. Bachmann, Proc. Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, Oct.10-15, 1993 New Orleans, Louisiana, Vol 94-7, p. 416-22 (1994).
  1. " Low temperature chemical beam epitaxy of gallium phosphide/silicon heterostructure, " J. T. Kelliher, J. Thornton, N. Dietz, G. Lucovsky and K. J. Bachmann, Mat. Sci. & Eng. B 22, pp. 97-102 (1993).
  1. " The Kinetics of Chemical Beam Epitaxy of Gallium Phosphide, " J.T. Kelliher, N. Dietz and K.J. Bachmann, Proc. SOTAPOCS 18, Honolulu, Hawai, The Electrochemical Society, Pennington, NJ, p. 17-22 (1994).
  1. " CuInS2 with Lamellar Morphology. I. Efficient Photoanodes in Acidic Polyiodide Medium, " S. Cattarin, N. Dietz and H.J. Lewerenz, J. Electroch. Soc. 141(5), pp. 1095-9 (1994).
  1. " An optical in-situ method for layer growth characterization, "   N. Dietz and H.J. Lewerenz,   Applied Surface Science 69, pp. 350-354 (1993).   (400 KB)  
  1. " Characterization of Semiconductors for Photovoltaic Applications using Brewster Angle Spectroscopy, " Nikolaus Dietz, Ph.D. Thesis, Dept. of Physics, Technical University of Berlin (Dec. 1991). Abstract (80 KB)   Thesis ( 3.3 MB)  
  1. " Defect identification in semiconductors by Brewster angle spectroscopy, "   H.J. Lewerenz and N. Dietz, J. Appl. Phys. 73(10), pp. 4975-87 (1993).   (1.4 MB) 
  1. " Structural and defect characterization of CuInS2 single crystals grown under elevated pressure, "  N. Dietz, M.L. Fearheiley, S. Schroetter and H.J. Lewerenz, Mater. Sci. & Eng. B 14(1), pp. 101-109 (1992).   (1.3 MB) 
  1. " Phase relation in the Cu-In-S System and the growth of CuInS2 single crystal, " M.L. Fearheiley, N. Dietz and H.J. Lewerenz; J. Electroch. Soc. 139(2), pp. 512-5 (1992).   (2 MB)  
  1. " CuInS2 grown under elevated pressures; Part 2: Optical defect characterization, " N. Dietz, M.L. Fearheiley and H.J. Lewerenz; in 'Non-Stochiometry in Semiconductors', K.J. Bachmann, H.-L. Hwang and C. Schwab (eds), Elsevier Science Publisher B.V., North Holland, pp. 133-140 (1992). (560 KB) 
  1. " CuInS2 grown under elevated pressures; Part 1: Structural and defect characterization, " M.L. Fearheiley, N. Dietz, S. Schroetter and H.J. Lewerenz; in 'Non-Stochiometry in Semiconductors', K.J. Bachmann, H.-L. Hwang and C. Schwab (eds), Elsevier Science Publisher B.V., North Holland, pp. 125-131 (1992). (590 KB)  
  1. " Simultaneous detection of optical constants e1 and e2 by Brewster angle reflectivity measurement, " N. Dietz and H.J. Lewerenz, Appl. Phys. Lett. 60(19), pp. 2403-05 (1992). (300 KB)  
  1. " Brewster angle spectroscopy: a new method for characterization of defect levels in semiconductors, " H.J. Lewerenz and N. Dietz; Appl. Phys. Lett. 59(12), pp. 1470-1472 (1991). (330 KB).  
  1. "The development of CuInS2 single crystals and thin films for photo voltaic applications, " M.L. Fearheiley, N. Dietz, R. Scheer, M. Kanis, S. Fiechter, M. Brüßler, C. Dzionk, H. Metzner, H. Migge and H.J. Lewerenz, 10th European Photo voltaic Solar Energy Conference, 8-12 April 1991, Lisbon, Portugal, pp. 586-589 (1991).
  1. " Phase Relations in the Cu-In-S System and evidence for a new meta-stable lamellae phase, " M.L. Fearheiley, N. Dietz, R. Scheer and H.J. Lewerenz; in Proceedings of the 13th State-of-the-Art Program on Compound Semiconductors and the Symposium on Metallization of III-V Compound Semiconductors, H.H. Lee, P. Clechet, O. Ueda and J.M. Woodall (eds.), Seattle, 49-62 (1990).
  1. " Phase Relations in the System In - CuInS2, " M.L. Fearheiley, N. Dietz, M. Birkholz and C. Höpfner, J. Electr. Mater. 20(2), pp. 175-177 (1991).   (290 KB)  
  1. " Reflectance spectroscopic investigations on CdxZnyMnzTe in the energy range of 1.5 to 25 eV " Nikolaus Dietz, Master Thesis, Dept. of Physics, Technical University of Berlin (Aug. 1988). (MS-Thesis 2.6 MB)  
  1. " VUV-Reflecance Spectroscopy on Cd1-xMnxTe " H.-E. Gumlich, Th. Bitzer, N. Dietz, Ch. Jung, H.-C. Mertens, D. Ricken, R. Weidemann, BESSY-Jahresbericht, pp. 223-8 (1988).
  1. " Reflexionsspektroskopische Untersuchungen zur Bandstruktur Semimagnetischer Halbleiter " H.-E. Gumlich, Th. Bitzer, N. Dietz, Ch. Jung, A. Knack, A. Krost, D. Ricken, R. Weidemann, BESSY-Jahresbericht, pp. 222-5 (1987).

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