S.
G. Matsik, M. B. M. Rinzan, and A. G. U. Pereraa)
Department
of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303
H.
C. Liu, Z. R. Wasilewski, and M. Buchanan
Institute
for Microstructural Sciences, National Research Council, Ottawa K1A 0R6,
Canada
Heterojunction
interfacial work function internal photoemission ~HEIWIP!
detectors provide an
interesting
approach to the development of quantum detectors for the terahertz range. In
this letter,
the
cutoff frequency/wavelength variation of HEIWIP detectors having different Al
fractions in
AlGaAs/GaAs
structures is experimentally verified, and a model is presented for designing
the
structures.
A key feature of HEIWIP responsivity is the ability to cover a broad frequency
range in
a
single detector with cutoff tailorability by adjusting the Al fraction in the
barrier regions.
Extending
the response to lower frequencies by the use of AlGaAs emitters and GaAs
barriers is
also
discussed. © 2003 American Institute of Physics. @DOI:
10.1063/1.1534409#