A. G. U. Perera, S. G. Matsik
Department of Physics an Astronomy, Georgia State University, Atlanta, GA 30303, USA
H. C. Liu, M. Gao, M. Buchanan
Institute for Microstructural Sciences, National Research Council, Ottawa, Ont. Canada K1A 0 R6
W. J. Schaff, W. Yeo
School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA
GaAs/InGaAs far-infrared quantum well photodetectors based on a bound-to-continuum (bc) and bound-to-quasibound (bq) intersubband transition with a cutoff wavelength (zero response) up to 35 µm are reported. A peak responsivity of 0.45 and 0.30 A/W and detectivity of 6 * 109 and 1.0 * 1010 cm √Hz/W at a wavelength of 31µm and a temperature of 4.2 K respectively for a bc and a bq detector have been achieved.
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