A. G. U. Perera and W. Z. Shen,
Department of Physics and Astronomy, Georgia State University, Atlanta,
GA 30303
H. C. Liu and M. Buchanan
Institute for Microstructural Sciences, National Research Council,
Ottawa, Canada
W. J. Schaff
School of Electrical Engineering,
Cornell University, Ithaca, NY 14853, USA
ABSTRACT
The recent development of p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (> 40 um) detectors is briefly reviewed. The emphasis is on the detector performance, which includes responsivity, quantum efficiency, bias effects, cutoff wavelength, uniformity, noise, and negative capacitance characteristics. Promising results indicate that p-GaAs HIWIP detectors have great potential to become a strong competitor in far-infrared applications. © 1999 Elsevier Science B.V. All Rights Reserved.
Keywords: GaAs, Homojunction interfacial
workfunction internal photoemission (HIWIP); Far-infrared detectors.
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