High Speed Switching and Power Dissipation in Heterojunction Double Barrier Diodes

D. D. Coon
Department of Physics, University of Pittsburgh, Pittsburgh, PA 15260

A. G. U. Perera
Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303

ABSTRACT
A theoretical analysis of the dynamical aspects of high speed switching between different stable states in bistabel circuits containing quantum well devices with negative differential resistance is presented. A variational calculus method is introduced to obtain the minimal energy dissipation required for a given switching time. Results are presented for individual heterojunction double barrier diodes and for pairs of heterojunciton double barrier diodes which are connected in series. © 1988 Academic Press Limited

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