Space Charge Analysis in Quantum Well Structures Leading to Spontaneous Pulsing

A. G. U. Perera and S. G. Matsik
Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303

ABSTRACT
We present a model describing the basis for spontaneous pulsing behavior in a GaAs/AlAs quantum well structure at 300K. This model is based on the accumulation of space charge in the well due to tunneling of electrons out of the well leading to a sharp increase in current and hence a pulse. The basic concepts used in the model are verified by comparison with experimental data for a single AlGaAs (or AlAs) barrier between two contacts. These structures will allow the use of neuron-like pulsing phenomena in IR detectors, image prcessors, neural networks, artificial neurons, etc. at much higher temperature than the 10K limit for pulsing observed in Silicon p-i-n diodes. © 1995 American Institute of Physics.

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