A. G. U. Perera and S. G. Matsik
Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303ABSTRACT
We present a model describing the basis for spontaneous pulsing behavior in a GaAs/AlAs quantum well structure at 300K. This model is based on the accumulation of space charge in the well due to tunneling of electrons out of the well leading to a sharp increase in current and hence a pulse. The basic concepts used in the model are verified by comparison with experimental data for a single AlGaAs (or AlAs) barrier between two contacts. These structures will allow the use of neuron-like pulsing phenomena in IR detectors, image prcessors, neural networks, artificial neurons, etc. at much higher temperature than the 10K limit for pulsing observed in Silicon p-i-n diodes. © 1995 American Institute of Physics.
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