Nikolaus Dietz , Department of Physics & Astronomy @ GSU

High-Pressure CVD Growth and Real-time Growth Diagnostics of InN and related materials




The demand for increased performance in high-power / high-frequency optoelectronic devices requires new pathways for the epitaxial growth of emerging compound semiconductor materials. While low-pressure chemical vapor deposition (CVD) methods offer excellent pathways for the fabrication of most III-V and II-VI compound semiconductors, these growth techniques posses limitations in the growth of high quality III nitride alloys due to the large thermal decomposition pressure of InN and related materials. The growth of thin films at elevated pressures, the real-time optical characterization of growth parameter and their optimization, as well as the growth of improved InN material are the main objectives in this research effort.

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    This research effort has been supported by NASA Grant# NAG8-1686 and the NASA Collaborative Agreement NCC8-95. Additional support in the reactor design and construction was provided by DOD MURI Grant F-49-620-95-1-0447.

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    Last update: May 16, 2005